Fast current-induced skyrmion motion in synthetic antiferromagnets

Author:

Pham Van Tuong12ORCID,Sisodia Naveen13ORCID,Di Manici Ilaria1ORCID,Urrestarazu-Larrañaga Joseba1ORCID,Bairagi Kaushik1ORCID,Pelloux-Prayer Johan1ORCID,Guedas Rodrigo14ORCID,Buda-Prejbeanu Liliana D.1ORCID,Auffret Stéphane1ORCID,Locatelli Andrea5ORCID,Menteş Tevfik Onur5ORCID,Pizzini Stefania2ORCID,Kumar Pawan6ORCID,Finco Aurore6ORCID,Jacques Vincent6ORCID,Gaudin Gilles1ORCID,Boulle Olivier1ORCID

Affiliation:

1. Université Grenoble Alpes, CNRS, CEA, SPINTEC, 38054 Grenoble, France.

2. Université Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France.

3. Department of Physics, Indian Institute of Technology Gandhinagar, Gandhinagar 382355, Gujarat, India.

4. Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, 28040 Madrid, Spain.

5. Elettra-Sincrotrone Trieste S.C.p.A., 34149 Basovizza, Trieste, Italy.

6. Laboratoire Charles Coulomb, Université de Montpellier, CNRS, 34095 Montpellier, France.

Abstract

Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks.

Publisher

American Association for the Advancement of Science (AAAS)

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