Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals-Reference-Cited by-全球学者库

Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals

Published:1998-08-14 Issue:5379 Volume:281 Page:969-971
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Penn R. Lee¹,Banfield Jillian F.¹

Affiliation:

1. R. L. Penn, Materials Science Program, University of Wisconsin–Madison, Madison, WI 53706, USA. J. F. Banfield, Mineralogical Institute, Graduate School of Science, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan.

Abstract

Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference32 articles.

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