Magnetic Mn-Doped Ge Nanostructures

Abstract

With the seemly limit of scaling on CMOS microelectronics fast approaching, spintronics has received enormous attention as it promises next-generation nanometric magnetoelectronic devices; particularly, the electric field control of ferromagnetic transition in dilute magnetic semiconductor (DMS) systems offers the magnetoelectronic devices a potential for low power consumption and low variability. Special attention has been given to technologically important group IV semiconductor based DMSs, with a prominent position for Mn doped Ge. In this paper, we will first review the current theoretical understanding on the ferromagnetism in MnxGe1−x DMS, pointing out the possible physics models underlying the complicated ferromagnetic behavior of MnxGe1−x. Then we carry out detailed analysis of MnxGe1−x thin films and nanostructures grown by molecular beam epitaxy. We show that with zero and one dimension quantum structures, superior magnetic properties of MnxGe1−x compared with bulk films can be obtained. More importantly, with MnxGe1−x nanostructures, such as quantum dots, we demonstrate a field controlled ferromagnetism up to 100 K. Finally we provide a prospective of the future development of ferromagnetic field effect transistors and magnetic tunneling junctions/memories using dilute and metallic MnxGe1−x dots, respectively. We also point out the bottleneck problems in these fields and rendering possible solutions to realize practical spintronic devices.