Lateral Heterometal Junction Rectifier Fabricated by Sequential Transmetallation of Coordination Nanosheet

Author:

Nishihara Hiroshi1ORCID,Tan Choon Meng1ORCID,Fukui Naoya2,Takada KenjiORCID,Maeda Hiroaki1ORCID,Selezneva Ekaterina1,Bourgès Cédric3,Tsukagoshi Kazuhito3ORCID,Mori Takao3ORCID,Masunaga Hiroyasu4,SASAKI Sono5ORCID,Sirringhaus Henning6ORCID

Affiliation:

1. Tokyo University of Science

2. n-fukui@rs.tus.ac.jp

3. National Institute for Materials Science

4. Japan Synchrotron Radiation Research Institute

5. Kyoto Institute of Technology

6. University of Cambridge

Abstract

Abstract Heterostructures of two-dimensional materials realise novel and enhanced physical phenomena, making them attractive research targets. Compared to inorganic materials, coordination nanosheets have virtually infinite combinations, leading to tunability of physical properties and are promising candidates for heterostructure fabrication. Although stacking of coordination materials into vertical heterostructures is widely reported, reports of lateral coordination material heterostructures are few. Here we show the successful fabrication of a sharp and seamless lateral heterojunction showing diode behaviour, by sequential and spatially limited immersion of a new metalladithiolene coordination nanosheet, Zn3BHT, into aqueous Cu(II) and Fe(II) solutions. Upon immersion, the Zn centres in insulating Zn3BHT are replaced by Cu or Fe ions, resulting in remarkable increase of conductivity. The transmetallation is spatially confined, occurring only within the immersed area. We anticipate that our results will be a starting point towards exploring transmetallation of various two-dimensional materials to produce lateral heterojunctions, by providing a new and facile synthetic route.

Publisher

Research Square Platform LLC

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