1. Liu, Lixin and Zhou, Hailong and Cheng, Rui and Yu, Woo Jong and Liu, Yuan and Chen, Yu and Shaw, Jonathan and Zhong, Xing and Huang, Yu and Duan, Xiangfeng (2012) {High-yield chemical vapor deposition growth of high-quality large-area AB-stacked bilayer graphene}. ACS Nano 6(9): 8241--8249 https://doi.org/10.1021/nn302918x, Bernal-stacked (AB-stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electric field. Mechanical exfoliation can be used to produce AB-stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of AB- and randomly stacked structures. Herein we report a rational approach to produce large-area high-quality AB-stacked bilayer graphene. We show that the self-limiting effect of graphene growth on Cu foil can be broken by using a high H 2/CH 4 ratio in a low-pressure CVD process to enable the continued growth of bilayer graphene. A high-temperature and low-pressure nucleation step is found to be critical for the formation of bilayer graphene nuclei with high AB stacking ratio. A rational design of a two-step CVD process is developed for the growth of bilayer graphene with high AB stacking ratio (up to 90%) and high coverage (up to 99%). The electrical transport studies demonstrate that devices made of the as-grown bilayer graphene exhibit typical characteristics of AB-stacked bilayer graphene with the highest carrier mobility exceeding 4000 cm 2/V{\textperiodcentered}s at room temperature, comparable to that of the exfoliated bilayer graphene. {\textcopyright} 2012 American Chemical Society.
2. Yan, Kai and Peng, Hailin and Zhou, Yu and Li, Hui and Liu, Zhongfan (2011) {Formation of bilayer bernal graphene: Layer-by-layer epitaxy via chemical vapor deposition}. Nano Letters 11(3): 1106--1110 https://doi.org/10.1021/nl104000b, We report the epitaxial formation of bilayer Bernal graphene on copper foil via chemical vapor deposition. The self-limit effect of graphene growth on copper is broken through the introduction of a second growth process. The coverage of bilayer regions with Bernal stacking can be as high as 67% before further optimization. Facilitated with the transfer process to silicon/silicon oxide substrates, dual-gated graphene transistors of the as-grown bilayer Bernal graphene were fabricated, showing typical tunable transfer characteristics under varying gate voltages. The high-yield layer-by-layer epitaxy scheme will not only make this material easily accessible but reveal the fundamental mechanism of graphene growth on copper. {\textcopyright} 2011 American Chemical Society.
3. Kim, Yong Seung and Lee, Jae Hong and Kim, Young Duck and Jerng, Sahng-Kyoon and Joo, Kisu and Kim, Eunho and Jung, Jongwan and Yoon, Euijoon and Park, Yun Daniel and Seo, Sunae and Chun, Seung-Hyun (2013) {Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition}. Nanoscale 5(3): 1221 https://doi.org/10.1039/c2nr33034b
4. Suk, Ji Won and Kitt, Alexander and Magnuson, Carl W. and Hao, Yufeng and Ahmed, Samir and An, Jinho and Swan, Anna K. and Goldberg, Bennett B. and Ruoff, Rodney S. (2011) {Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates}. ACS Nano 5(9): 6916--6924 https://doi.org/10.1021/nn201207c, sep
5. Miseikis, V and Convertino, D and Mishra, N and Gemmi, M and Mashoff, T and Heun, S and Haghighian, N and Bisio, F and Canepa, M and Piazza, V and Coletti, C (2015) {Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor}. 2D Materials 2(1): 014006 https://doi.org/10.1088/2053-1583/2/1/014006, jan