Manufacturing and the synthesis of (CdTe)x: (S)1-x/PSi by laser-induced plasma technology

Abstract

Abstract In this work, the porous silicon (PS) layers were prepared with the electrochemical etching technique of the n-type silicon with the resistance (3.2 µm) in the hydrofluoric acid (HF) at a concentration of (1 ml )with the current density of (25 mA/cm2) with a (20) minute etching time. The morphological advantages (AFM) and the electrical properties of J-V were studied. The atomic force microscopy investigation displays the rough silicon surface, with the etching process (etching time) porous structure nucleates which leads to an increase in the depth and the average diameter (34.12 nm). Consequently, the surface roughness also increases. The electrical properties of produce PS; namely current density-voltage characteristics, show that Porous silicon has a sponge-like structure and the pore diameter is increased with etching current density which leads to an increase in the efficiency of Solar cell devices. This behavior was attributed to the increase in the depletion zone width which led to the increase in built-in potential.