Modeling of optimized lattice mismatch by carbon-dioxide laser annealing on (In, Ga) co-doped ZnO multi-deposition thin films introducing designed bottom layers

Abstract

Abstract In this study, modeling of optimized lattice mismatch by carbon-dioxide annealing on (In, Ga) co-doped ZnO multi-deposition thin films were investigated by analyzing the crystallography and optical analysis. (In, Ga) co-doped ZnO multi-deposition thin films with various types of bottom layers were fabricated on sapphire substrates by solution synthesis, spin coating process and carbon-dioxide laser irradiation with post annealing. (In, Ga) co-doped ZnO multi-deposition thin films with Ga-doped ZnO as the bottom layer showed the lowest mismatch rate between the substrate and the bottom layer of the film. The carbon-dioxide laser annealing process can improve electrical properties by reducing lattice mismatch. After applying the carbon-dioxide laser annealing process to the (In, Ga) co-doped ZnO multi-deposition thin films with Ga-doped ZnO as the bottom layer, the optimized sheet resistance of 34.5 kΩ/sq and a high transparency rate of nearly 90% in the visible light wavelength region were obtained.