In-plane Hall effect in rutile oxide films induced by the Lorentz force

Abstract

Abstract The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film1. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature2-8, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice9-12. Here, we report an unambiguous experimental observation of the in-plane Hall effect (IPHE) in centrosymmetric rutile RuO2 and IrO2 single-crystal films under an in-plane magnetic field. The measured Hall resistivity is found to be proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the IPHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of in-plane anomalous Hall effects and quantum anomalous Hall effects. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.