Poly(ether ketone ketone)/Silica nanotubes Substrate Films and Their Sixth Generation Communciation Performance

Abstract

Abstract Silica hollow tube (SHT) nanofillers were fine distributed over poly(ether ketone ketone) (PEKK) to serve decently as sixth generation (6G) substrate films. Distinctly lower dielectric and thermal expansion characteristics were detected for all PEKKaxSHTy film sequence filled with proper amounts of SHT nanofillers. The dielectric characteristics detected for all PEKKaxSHTy film sequence diminished to a minimum, as the SHT loads came near an optimal value of 8wt%. The LCTE evaluated for each PEKKaxSHTy film sequence reduced distinctly with increasing SHT loads. Suitable dielectric constant (er) (2.26 at 1 MHz), and/or dielectric loss (tan d) (0.0027 at 1 MHz) and/or Linear coefficient of thermal expansion (LCTE) (30.5×10-6/oC) for 6G rapid-speed communication were detected for PEKKP700092SHT8 substrate film having 8wt% load of SHT nanofillers. Meanwhile, the beginning degradation temperatures estimated for all PEKKaxSHTy film sequence increased distinctly with increasing SHT loads. All free-volume-cavity characteristics estimated for all PEKKaxSHTy film sequence approached a highest value, as SHT loads came near an optimal value of 8wt%. Distinctly lower er and tan d were detected for PEKKa and PEKKaxSHTy having higher free-volume-cavity characteristics. Possible interpretations for the distinctly diminished dielectric and/or heat-resistant characteristics acquired for PEKKaxSHTy films are presented.