Solution-processed NO2 gas sensor based on PbS QDs doped with P3HT operating at room temperature

Abstract

Abstract With the worldwide industrial development and the increase in means of transportation such as automobiles and ships, the problem of the greenhouse gases has been steadily emerging. Among them, NO2 is a gas that is emitted in large quantities from the automobile and factories, and is unavoidably emitted in modern society. Therefore, a sensor capable of precisely detecting NO2 is required. Among various types of NO2 sensors, metal oxide-based sensors are reported the most. However, it is impossible to operate at room temperature due to its high-temperature operating characteristics, so a heater for heating must be designed inside the sensor or installed outside. On the other hand, the NO2 sensor based on PbS QDs has the advantage of being able to measure at room temperature and being easily manufactured through a solution process rather than a complicated semiconductor process. In this study, NO2 sensor was fabricated by doping P3HT on PbS QDs. As a result of the responsivity of the fabricated sensor to NO2 gas, it was confirmed that the sensor had high responsivity with a resolution of 200 ppb from 20 to 0.4 ppm due to the stability of the thin film and high hole mobility characteristics by P3HT.