Simulation study and HSPICE modeling of single-event transients induced by secondary ions not incident to the drain in nanoscale CMOS technology-Reference-Cited by-同舟云学术

Simulation study and HSPICE modeling of single-event transients induced by secondary ions not incident to the drain in nanoscale CMOS technology

Published:2023-01-13 Issue: Volume: Page:
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Author:

Wu Hao¹,Jin Gang¹,Yi Tengyue²,Zhuang Yiqi¹

Affiliation:

1. Xidian University School of Microelectronics

2. Zhangjiang Laboratory

Abstract

Abstract Terrestrial single-event transients (SETs) are mainly induced by secondary ions of neutron-induced nuclear reactions, which do not cross the sensitive drain in most cases. Technology computer-aided design (TCAD) simulations show that in those cases, both diffusion-collection current and burst-plateau-type current waveform could occur in nanoscale complementary metal-oxide-semiconductor (CMOS) technology. The necessity of including recombination effect in diffusion-collection model is identified, and an equivalent circuit model (ECM) is established to describe SETs induced by secondary ions with short distance to the drain. Both models are verified by TCAD simulations.

Publisher

Research Square Platform LLC

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