Program Gate-Less Reconfigurable FETs Based on Ferroelectric-Reference-Cited by-同舟云学术

Program Gate-Less Reconfigurable FETs Based on Ferroelectric

Published:2023-03-30 Issue: Volume: Page:
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Author:

Lee Dong Hyeok¹,Chang Jiwon¹

Affiliation:

1. Yonsei University

Abstract

Abstract In this work, we propose ferroelectric-based reconfigurable field-effect transistors (FeRFETs) which can switch the polarity without program gate (PG). In FeRFETs, the non-volatile and reconfigurable electrostatic doping by ferroelectric enables the type conversion without PG. Through the TCAD simulations calibrated with the experimental data, we confirm a reconfigurable high doping level (> 1×1021 cm-3), a clear type conversion and highly tunable performance in FeRFETs. It is also found that carefully tailoring coercive field (EC) is important to maximize the performance of FeRFETs.

Publisher

Research Square Platform LLC

Reference29 articles.

1. de Marchi, M. et al. Polarity control in double-gate, gate-all-around vertically stacked silicon nanowire FETs. in 2012 International Electron Devices Meeting 8.4.1–8.4.4 (IEEE, 2012).

2. Jian Zhang, Gaillardon, P.-E. & de Micheli, G. Dual-threshold-voltage configurable circuits with three-independent-gate silicon nanowire FETs. in 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013) 2111–2114 (IEEE, 2013).

3. Gaillardon, P.-E., Amaru, L., Zhang, J. & Micheli, G. de. Advanced system on a chip design based on controllable-polarity FETs. in Design, Automation & Test in Europe Conference & Exhibition (DATE), 2014 1–6 (IEEE Conference Publications, 2014).

4. Raitza, M. et al. Exploiting transistor-level reconfiguration to optimize combinational circuits. in Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017 338–343 (IEEE, 2017).

5. Designing efficient circuits based on runtime-reconfigurable field-effect transistors;Rai S;IEEE Trans Very Large Scale Integr VLSI Syst,2019