Design of Resonant Cavity-Enhanced InAs/GaSb Superlattice LWIR Photodetector

Author:

Gong Ruixin1,Zhu Lianqing2,Feng Qingsong2,Liu Zhiying1

Affiliation:

1. Changchun University of Science and Technology

2. Beijing Information Science and Technology University

Abstract

Abstract

Type-II superlattices (T2SLs) have recently emerged as a focal point in long-wavelength infrared (LWIR) detection, showcasing remarkable potential across various applications. In this work, we have revealed a theoretical investigation into the band structure and optical properties of 14/7 ML InAs/GaSb SLs, employing density functional theory (DFT). Our findings show that the energy gap of these SLs is determined to be 0.111 eV through energy band structure analysis by the HSE06 method. Moreover, we have designed a resonant cavity-enhanced "Φ" structure for the 14/7 ML InAs/GaSb SLs infrared detector. This innovative design markedly enhances absorption efficiency, increasing it from 16.48% to an impressive 76.35% at the 11.2 µm wavelength. Further analysis includes a detailed examination of the electric field distribution within this structure and a comprehensive examination of the enhanced plasmonic resonator's perfect absorption phenomenon. The results from these analyses underscore the exceptional absorption capabilities of our resonant cavity-enhanced infrared detector, indicating its potential for significant applications in LWIR SLs focal plane.

Publisher

Springer Science and Business Media LLC

Reference35 articles.

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2. Haddadi, A. et al. Low frequency noise in 1024x1024 long wavelength infrared focal plane array based on type-II InAs/GaSb superlattice. in Quantum Sensing and Nanophotonic Devices IX vol. 8268 199–204 (SPIE, 2012).

3. Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the center for quantum devices;Razeghi M;P IEEE,2009

4. Type-II superlattice photodetectors versus HgCdTe photodiodes;Rogalski A;Prog Quant Electron,2019

5. InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition;Sai-Halasz GA;Phys Rev B

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