Abstract
Abstract
The development of dielectric constant materials for energy storage applications is in high demand. Lead zirconate and lead zirconate titanate doping with erbium thin films and bulk -based devices with variant dielectric constant were created in this work. Pb(0.9) )-Er0.01 Zr(0.09 (PEZ) and Pb0.9-Er0.01-Zr0.045-Ti0.045 (PEZT) thin films were produced on a glass substrate using a sol-gel doctor blade technique at low temperature. X-ray diffraction (XRD), transmission electron microscopy (TEM), and electron diffraction (ED) were used to examine the structure of the produced nanocrystals. PEZ and PEZT films had nanocrystals that were 9.5 nm and 15 nm in size, respectively, whereas PEZ and PEZT bulk nano-rods had 455 ± 5 nm in length and 45 ± 1 nm in diameter. The TEM and XRD results were found to be completely consistent in terms of particle size. Ferroelectric properties and dielectric characteristics were found to be frequency dependent. Dielectric experiments revealed that the dielectric constant was decreasing for bulk samples as compared to film samples. The residual polarization of the Er-doped PEZ and PEZT films was the highest, reaching 36.25 µC/cm2 and 69.79 µC/cm2, respectively, and the coercive fields were 43kV/cm and 45.43 kV/cm, respectively. On the other hand, PEZ and PEZT bulk samples had residual polarizations of 27.15 µC/cm2 and 37.29 µC/cm2, respectively, while having coercive fields of 32.3 kV/cm and 39.3 kV/cm, respectively. On the other hand, (PEZ) and (PEZT) samples may have potential use in energy storage applications.
Publisher
Research Square Platform LLC
Reference44 articles.
1. Synthesis, structure and dielectric properties of zirconium and titanium oxide -doped lead oxide nano-crystalline films fabricated by sol-gel techniques for energy-storage application;Ibrahim FA;Journal of Materials Science: Materials in Electronics,2021
2. Effects of Pr doping on crystalline orientation, microstructure, dielectric, and ferroelectric properties of Pb1.2–1.5x PrxZr0.52 Ti0.48O3 thin films prepared by sol–gel method;Chen;Journal of Materials Science: Materials in Electronics,2019
3. Sol–gel PZT and Mn-doped PZT thin films for pyroelectric applications;Zhang Q;J. Phys. D,2001
4. Fabrication of multilayer Pb(Zr, Ti)O3 thin film by sputtering deposition for MEMS actuator applications;Sano R;Jpn. J. Appl. Phys.,2015
5. Structural and electrical properties of Ca2+ -modified PZT electroceramics;Shrabanee S;Phys. B,2007