Electron Blocking Layer Architecture to enhance the hole injection in the active region for 215 nm Ultra-violet Light Emitting Diode (UVC-LED)-Reference-Cited by-同舟云学术

Electron Blocking Layer Architecture to enhance the hole injection in the active region for 215 nm Ultra-violet Light Emitting Diode (UVC-LED)

Published:2023-01-17 Issue: Volume: Page:
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Author:

Hussain Hadba¹,Alrubaian Renad Ali²,Almogbel Abdullah¹,Alharbi Abdullah¹

Affiliation:

1. King Abdulaziz City for Science and Technology (KACST)

2. Princesses Norah University (PNU)

Abstract

Abstract This work engineered the p-Electron Blocking Layer (p-EBL) of the AlGaN-based deep ultraviolet (UVC) light-emitting diode (LED) to achieve a high Radiative Recombination Rate (RRR). Carrier concentration can be efficiently injected into the active region by inserting an undoped thin AlGaN layer between the doped p-AlGaN layer as a superlattice. Compared with the UVC-LED with the bulk p-AlGaN EBL, the superlattice LED improves the optical power, holes and electrons concentration, and RRR.

Publisher

Research Square Platform LLC

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