An energy efficient way for quantitative magnetization switching

Abstract

Abstract When controlling ferroelectric (FE) and ferromagnetic (FM) properties together, this multiferroic system offers many opportunities for energy-efficient electronics such as memories, logic and other novel spintronic devices. Recent progress of electrically controlled spin devices blazes a trail to develop energy efficient devices by controlling magnetization switching. Here, we integrate spin orbit torque (SOT) devices in multiferroics and systematically study the angle dependency of SOT effects on a piezoelectric substrate to control localized in-plane strain using the electric field across the substrate. The controlled strain modulates the magnetization switching quantitatively through SOT in the multiferroic heterostructures. Besides, the strain shows distinguished modulation capability with the different orientations, which can immediately be used in logic arrays. The controllability of electric field on the magnetization switching behavior was revealed by harmonic Hall measurement, X-ray magnetic circular dichroism-photoemission electron microscopy (PEEM), X-ray diffraction, and magnetic force microscopy (MFM) as well as micromagnetic simulation. In virtue of electric-field-induced strain, the result finds the way for controlling SOT-induced magnetization switching with ultralow energy consumption, which will be applicable to the next generation spin-based logic devices.