Fabrication and Characterization of Silicon nanowire/PEDOT: PSS Hybrid Hetrojunction Photosensor

Abstract

AbstractSilicon nanowire (SiNW) samples arrays are prepared by the metal-assisted chemical etching method using Ag as a catalyst and different etching durations of 15, 30 and 60 min. The structural, morphological and optical properties of the prepared SiNWs are investigated. The diameter of the prepared SiNWs ranges from 20 nm to 280 nm whilst the reflectance is less than 1% in the visible region wavelengths for all prepared samples. Hybrid heterojunction photosensors based on n-SiNWs/ PEDOT: PSS are fabricated by directly spin casting SiNWs by PEDOT: PSS thin films. The photosensor fabricated based on the SiNWs prepared for 60 min of duration exhibit excellent spectral responsivity of 23.231 mA W− 1and high sensitivity of 43.948% at 0 V bias under 622 nm light. Furthermore, the sensor shows high specific detectivity reaching 0.3×1011Jones with the bias voltage of 1 V and Trice/Tfallof 20/23 ms with the bias voltage of 0.5 V.