Flexible Crossbar Molecular Devices with Patterned EGaIn Top-Electrodes: Scalable Integration and All-Molecule-Circuit Implementation

Abstract

Abstract In this research study, we designed and fabricated a unique crossbar architecture, incorporating vertically integrated self-assembled monolayers (SAMs) in electronic devices. We used this architecture showcased 100 individual vertical molecular junctions on a single chip with high yield of working junctions and high device uniformity. The study introduced a transfer approach for patterned liquid-metal Ga/In alloy (EGaIn) top-electrodes enabling the creation of fully flexible molecular devices with electrical functionalities. The devices exhibited excellent charge transport performance, sustained high rectification ratio (> 103), and stable endurance and retention properties, even when devices were significantly bent. Furthermore, we successfully implemented Boolean logic gates, including OR and AND gates, as well as half-wave and full-wave rectifying circuits. The novel design of the flexible molecular device represents a significant step in harnessing the potential of molecular devices for high-density integration and possible molecule-based computing.