Controlled synthesis of ZnO and Mn-doped ZnO nanoparticles for applications in low-frequency Di-electric Devices

Abstract

Abstract Transition metal oxide (TMOs) nanomaterials have gotten remarkable attention due to their vast potential applications in the field of science and technology. In this study, a controlled and facile synthesis route was applied for the preparation of manganese (Mn) doped ZnO nanoparticles (NPs). The percentage of dopant, manganese (Mn) in the host matrix ZnO varied from 2%, 4%, 6%, and 8%. The physical properties of all the prepared samples were examined by x-ray diffractometry (XRD), transmission electron microscope (TEM), UV-vis spectroscopy (UV), and LCR meter. XRD analysis confirms a defect-free hexagonal wurtzite crystal structure (JCPDS No. 036-1451) for all the prepared nanostructures. The overall crystalline size shows an increasing trend from ~17nm to ~ 34nm with Mn doping. The surface morphology was investigated by TEM, which indicated all the prepared NPs are spherical/cubic. The absorption and energy band gap of the synthesized nanoparticle was carried out by using UV-visible spectroscopy which shows that the energy band gap increases from 2.91 eV to 3.33 eV with changing the size of the prepared NPs. The dielectric constant increases with increasing the dopant Mn concentrations which is also been conformed from the ac conductivity.