Affiliation:
1. Tianjin University
2. Soochow University
3. Sichuan University
4. Nanyang Technological University
5. Anhui Zhongyi New Materials Technology Co., Ltd
Abstract
Abstract
The focus of artificial synaptic device researches has gradually shifted towards synaptic devices with specific functionalities. In this work, we report an optically responsive memristor (with a configuration of Ag:AgI/MA0.4FA0.6PbI3/Ag:AgI) that achieves bidirectional switching of resistive states utilizing 450 nm and 650 nm light at an ultra-low readout voltage of 0.001 V. The device presents artificial visual synapses (AVS) features in terms of short-term plasticity (STP)/long-term plasticity (LTP) to pulsed light in the range of 300-700 nm. Under 450 nm blue light, an abrupt shift from low to high resistance can be observed, resembling the effect of glare. Intriguingly, the introduction of 650 nm red light can expedite the recovery following blue light exposure. These attributes underscore potential of the device for tasks encompassing color recognition, memory functions, and adaptation, suggesting promising prospects within artificial visual neural networks for ultraviolet and visible light sensing, transmission, and memory applications.
Publisher
Research Square Platform LLC