Affiliation:
1. National Dong Hwa University
Abstract
Abstract
Tunnel field-effect transistor (TFET) has been considered one of the promising next-generation transistors due to its potentially limit-breaking low subthreshold swing and better immunity against the short-channel effects. However, the low ON-state current (ION) of TFETs has been a critical problem to be dealt with. In this work, we investigated the effects of the source doping concentration and the source doping gradient (SDG) on the ION of the n-type Si gate-all-around (GAA) nanowire (NW) TFETs by the Atlas device simulator. Unexpectedly, we found that increasing the source doping concentration does not necessarily improve the ION especially for the TFETs with large SDG. Besides, reducing the SDG indeed increases the ION, however, for the TFETs with low source doping concentration such as 1×1019 cm-3, the ION improvement by lessening SDG becomes insignificant.
Publisher
Research Square Platform LLC
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