Application the reduced method for Characterization the photonic properties of amorphous Se 79.13 S 11.41 Te 9.64 Nano thin film composition Part(I)

Abstract

Abstract Application the reduced method for determination the optical properties of nano thin film chalcogenide composition Se79.13S11.41Te9.64 reveals that the refractive index (n) is wavelength (λ) dependent. Cauchy dispersion equation is fit the obtained results of n = f (λ) for the measured wavelength and Cauchy dispersion coefficients are determined. The optical band edge is equal to 1.8eV. The optical energy gap is allowed indirect equals to 4 eV, The sup energy level in the gap equals to ≈ 3eV. From the dependence of extinction coefficient on λ the Fermi level of the nano thin film Se79.13S11.41Te9.64 is determined equals to 2.528 eV. Applying Wemple- DiDomenico The single oscillator model, the effective dispersion oscillator energy E o = 1.17 eV and the dispersion energy Ed is determined equal to ≈3.87 eV. Also, the following results determined, the static refractive index no =2.15, the static dielectric constant εo = 4.62 and the average bond strength is \({E}_{g}^{WD}=1.95eV\) The effect of lone pair concentration in chalcogenides on the energy gap and nonlinearity properties of amorphous chalcogenides is the subject of the second part of this work.