Stoichiometric Effect on Defect States and Optical Properties of LiInSe 2 Single Crystals

Author:

Zheng Zhi1,Zhu Meng hua1,Zhang Zheren2,Gao Zhihui2,Xu Meng2,Zhang Rui1,Xu Yadong2

Affiliation:

1. State Key Laboratory of Nuclear Power Safety Technology and Equipment, China Nuclear Power Engineering Co., Ltd.

2. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University

Abstract

Abstract LiInSe2 crystals are promising semiconductor materials for neutron detector due to the large neutron capture cross-section area of specific isotopes (6Li) and high charge transport properties. However, the optoelectronic performance fails to reach the expected level due to the difficulty of controlling the crystal defects. Herein, we modulate the stoichiometric ratio to control the type of defects in the LiInSe2 single crystals grown by vertical Bridgman method. The UV-vis-NIR transmission results indicate that the band gap of Li1.01In1Se2 sample in yellow color is close to ~ 2.83 eV at room temperature, which is consistent with the theoretical LiInSe2 (~ 2.86 eV). The photoluminescence (PL) spectroscopy is employed to analyze the defect concentration. The results indicate that the defects type in yellow Li1.01In1Se2 single crystal are defined as VSe+ and LiIn2− which results from the introduced excess Li and the suppressed adverse defects of InLi2+ and VLi. These results demonstrate a feasible route to obtaining yellow high-quality 6LiInSe2 crystals and promote the application of 6LiInSe2 neutron detectors.

Publisher

Research Square Platform LLC

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