Effects of high temperature growth of dislocation filter layers in GaAs-on-Si-Reference-Cited by-同舟云学术

Effects of high temperature growth of dislocation filter layers in GaAs-on-Si

Published:2022-09-06 Issue: Volume: Page:
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Author:

Kim HoSung¹,Ko Young-Ho¹,Han Won-Seok¹

Affiliation:

1. Electronics and Telecommunications Research Institute

Abstract

Abstract GaAs-on-Si templates with two different dislocation filter layers (DFLs) were grown at 550 °C low temperature (LT)-DFL and 660 °C high temperature (HT)-DFL using metal organic vapour-phase epitaxy and the effects of the growth temperature were studied. The threading dislocation density (TDD) values of LT-DFL and HT-DFL were 5.2 × 107 cm-2 and 1.5 × 107 cm-2, respectively. The annihilation process was mainly observed in the HT-DFL by a transmission electron microscope (TEM), resulting in a lower TDD. The 500 nm-thick GaAs bulk layer and InAs QDs were regrown on GaAs-on-Si templates and the optical properties were also evaluated by photoluminescence (PL). The highest PL peak intensity of the HT-DFL indicates that less non-radiative recombination in both the GaAs bulk and QDs occurred due to the reduced TDD.

Publisher

Research Square Platform LLC

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