Comparative of Analog Performance of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs-Reference-Cited by-同舟云学术

Comparative of Analog Performance of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs

Published:2022-10-10 Issue: Volume: Page:
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Author:

Alves Camila¹^ORCID,de Souza Michelly¹

Affiliation:

1. FEI's University Centre: Centro Universitario da FEI

Abstract

Abstract This work presents a comparative study of the transcapacitances of an asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs with different gate lengths. This analysis were done by means of two-dimensional numerical simulations. Simulated results show the influence of others transcapacitances on the gate-to-gate capacitance for the ASC SOI device and the GC SOI device.

Publisher

Research Square Platform LLC

Reference8 articles.

1. COLINGE, J.P.: “Silicon-On-Insulator Technology: Materials to VLSI”, 3rd edn. Kluwer Academic, Massachusetts (2004)

2. de Souza, M., Flandre, D., Pavanello, M.A.: “Channel length influence on the analog characteristics of asymmetric self-cascode association of SOI transistors,” in 2013 Symposium on Microelectronics Technology and Devices (SBMicro), Sep. pp. 1–4. doi: (2013). 10.1109/SBMicro.2013.6676154

3. Sanz, M.T., Celma, S., Calvo, B., Flandre, D.: Self-cascode SOI versus graded-channel SOI MOS transistors. Circuits, Devices and Systems, IEE Proceedings -. 153. 461–465. (2006). 10.1049/ip-cds:20060058

4. Galup-Montoro, C., Schneider, M.C., Loss, I.J.B.: “Series-parallel association of FET’s for high gain and high frequency applications", IEEE Journal of Solid-State Circuits, vol. 29, no. 9, pp. 1094–1101, Sep. doi: (1994). 10.1109/4.309905

5. de Souza, M., Flandre, D., Pavanello, M.A.: “Asymmetric self-cascode configuration to improve the analog performance of SOI nMOS transistors,” in SOI Conference (SOI), 2011 IEEE International, Oct. pp. 1–2. doi: (2011). 10.1109/SOI.2011.6081716