Simulation-based calculations of the proton dose in phase change memory cells
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Published:2013
Issue:3
Volume:28
Page:299-307
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ISSN:1451-3994
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Container-title:Nuclear Technology and Radiation Protection
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language:en
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Short-container-title:NUCL TECH RAD PROT
Author:
Zdjelarevic Nevena1,
Knezevic Ivan1,
Vujisic Milos2ORCID,
Timotijevic Ljubinko2
Affiliation:
1. Public Company Nuclear Facilities of Serbia, Belgrade + Faculty of Electrical Engineering, Belgrade
2. Faculty of Electrical Engineering, Belgrade
Abstract
Monte Carlo simulations of proton irradiation on phase change memory cells
were conducted and the proton dose, in both the whole memory cell and in its
active layer, calculated. The memory cell was modeled by a multi-layer stack
consisting of two TiW electrodes and ZnS-SiO2 films as insulators surrounding
the active region. Materials considered for the active region were Ge2Sb2Te5,
AgSbSe2, and Si2Sb2Te5. The effects of exposing phase change memory cells to
proton beams were investigated for various thicknesses of phase change
materials and different proton energies. Radiation-induced changes in the
investigated memory cells are presented, including the accumulation of atomic
displacements and the thermal heating of the active region. Possible effects
of these changes on cell operation are discussed.
Funder
Ministry of Education, Science and Technological Development of the Republic of Serbia
Publisher
National Library of Serbia
Subject
Safety, Risk, Reliability and Quality,Nuclear Energy and Engineering
Cited by
1 articles.
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