Review on double-gate MOSFETs and FinFETs modeling-Reference-Cited by-同舟云学术

Review on double-gate MOSFETs and FinFETs modeling

Published:2013 Issue:3 Volume:26 Page:197-213
ISSN:0353-3670
Container-title:Facta universitatis - series: Electronics and Energetics
language:en
Short-container-title:FACTA U EE

Author:

Cerdeira A.¹,Estrada M.¹,Alvarado J.²,Garduño I.²,Contreras E.¹,Tinoco J.³,Iñiguez B.⁴,Kilchytska V.⁵,Flandre D.⁵

Affiliation:

1. Solid-State Electronics Section, CINVESTAV, Mexico, Mexico

2. Ciudad Universitaria, Centro de Investigación en Semiconductores, BUAP, Puebla Pue., Mexico

3. Universidad Veracruzana, Centro de Investigación en Micro y Nanotecnología, Veracruz, México

4. Universitat Rovira I Virgili, Tarragona, Spain

5. ICTEAM Institute, Universitet catholique de Louvain (UCL), Louvain-la-Neuve, Belgium

Abstract

The development of compact models for double-gate (DG) MOSFETs and FinFETs necessary in circuit simulators is an important research field, which allows the efficient practical characterization of these devices, as well as their application in analog circuit design. In this paper we review and assess different approaches for developing core and complete compact models for DG MOSFETs and FinFETs.

Publisher

National Library of Serbia

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Stability for Robust and Low-Power SRAM Cell using FinFET Technology;Journal of Circuits, Systems and Computers;2023-10-28

2. On the compact modelling of Si nanowire and Si nanosheet MOSFETs;Semiconductor Science and Technology;2022-01-05

3. “Device Design of 30 and 10 nm Triple Gate Single Finger Fin-FET for on Current (ION) and off Current (IOFF) Measurement”;Smart Computing Techniques and Applications;2021

4. Analysis of Surface Potential and Electric Field for Fully Depleted Graded Channel Dual-Material-Double-Gate MOSFET through Modeling and Simulation;Transactions on Electrical and Electronic Materials;2020-11-24

5. Mathematical Modeling of Junctionless Triple Material Double Gate MOSFET for Low Power Applications;Journal of Nano Research;2019-02