Investigation of the effect of additional electrons originating from the ultraviolet radiation on the nitrogen memory effect
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Published:2015
Issue:3
Volume:28
Page:423-437
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ISSN:0353-3670
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Container-title:Facta universitatis - series: Electronics and Energetics
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language:en
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Short-container-title:FACTA U EE
Affiliation:
1. Faculty of Electronic Engineering, Niš
Abstract
The influence of ultraviolet radiation on memory effect in nitrogen has been
investigated. The spectrum of the radiation which passes through the walls of
the experimental sample was obtained by the spectrometer. A detailed
comparison of experimental results of electrical breakdown time delay as a
function of afterglow period with and without ultraviolet irradiation was
performed. These studies were done for such product of gas pressure and
inter-electrode distance when both breakdown initiation mechanisms exist. The
research has shown that ultraviolet radiation leads to the decrease in ion
concentration in early nitrogen afterglow due to recombination of nitrogen
ions with electrons released from the tube walls and electrodes. Meanwhile,
it has been cofirmed that this radiation has a negligible influence on the
breakdown initiation in late nitrogen afterglow when a significant nitogen
atom concentration is persistent. When the concentration of nitrogen atoms
decreases enough, the breakdown initiation is caused by cosmic rays but UV
photons have an important influence because of the rise of the electron
yield.
Funder
Ministry of Education, Science and Technological Development of the Republic of Serbia
Publisher
National Library of Serbia
Cited by
1 articles.
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