Correlation between grain deviation angles and the partial ordering transformation of grain line in Bi4Si3O12 microcrystals

Author:

Zhang Z.G.1,Jiang Z.Y.2,Wang X.F.3,Tian Q.Q.3

Affiliation:

1. Institute of Modern Physics, Northwest University, Xi’an, P.R. China + School of Physics and Electronic Engineering, Xianyang Normal University, Xianyang, P.R. China

2. Institute of Modern Physics, Northwest University, Xi’an, P.R. China

3. School of Material Science & Technology, Shanxi University of Science & Technology, Xi’an, P.R. China

Abstract

Bismuth silicate micro-crystals with grain line structure were prepared by sintering method under atmosphere pressure. The samples were characterized for structural and surface morphological properties by X-ray diffraction (XRD) and Environmental scanning electron microscopy (ESEM). The result shows that Bi4Si3O12 grains are always distributed in pairs on both sides of a complete grain line. There is highly positive correlation between grain deviation angles on both sides of a stable complete line. Although the grains distribute in pairs, there is zero correlation between grain angles on both sides of an unstable complete line. By the reduction of grain angle on one side, grain sizes on the side gradually decrease. After adjustment, grain angles have highly positive correlation and the line turns stable. If there is disordered structure on one side of a line and ordered structure on the other side, the disordered structure may turn to highly ordered structure. The partial ordering transformation on the disordered side has no effect on the structure on the other side. While the growth directions of the grains on one side of a line face to a disordered grain distribution zone, the line loses the characteristic of grain growth in pairs.

Publisher

National Library of Serbia

Subject

Materials Chemistry,Metals and Alloys,Condensed Matter Physics,Ceramics and Composites

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