Effect of catalyst HF concentration on the electrical characteristics of ultra low-k materials

Author:

He Zhi-Wei1,Zhu Shi-Qiu2,Wang Sheng-Li2,Qi Zheng2,Guan Yu-Yuan2

Affiliation:

1. Department of Applied Physics, China Agricultural University, Beijing, P.R. China + Key Laboratory of Semiconductor Materials Science Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P.R. China

2. Department of Applied Physics, China Agricultural University, Beijing, P.R. China

Abstract

The effects of catalyst HF concentration on the dielectric and electrical properties of SiOF films are discussed. From the current density-voltage and capacitance-voltage curves, we observed that the film catalyzed with the special concentration of HF (the ratio of HF/H2O = 1/5) shows good moisture resistance, low leakage current (10-11 A/cm2 at 1 MV/cm) and high breakdown field (6 MV/cm), which can be explained by the results of Fourier transform infrared spectra. The dielectric constant value is also very low and reaches about 1.75 after annealing at the temperature of 450?C. Therefore, the concentration of HF catalyst is an important factor in the sol-gel process.

Publisher

National Library of Serbia

Subject

Ceramics and Composites

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Composite materials based on nanoporous SiO2 matrices and squarylium dye;Journal of Non-Crystalline Solids;2014-04

2. Synthesis of SiOF nanoporous ultra low-k thin film;Journal of Materials Science: Materials in Electronics;2013-10-05

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