Mixed mode performance of GaAs UTB-MOSFET with extra insulator region and undoped buried oxide region

Abstract

Investigation of mixed mode performances for GaAs UTB-MOSFET at nanoscale regime keeping in view of "Beyond CMOS" is the current trend of semiconductor industry. Here it is proposed to modify conventional models by considering an extra Insulator Region (IR) and Undoped Buried oxide Region (UBR) to study the performance related to digital and analog/RF applications. Here a GaAs is considered as the channel material. The IR-UTB-SOI-n-MOSFET has shown promising results with respect to SS, DIBL, fT and switching speed.