Enhanced dynamic voltage clamping capability of Clustered IGBT at turn-off period
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Published:2016
Issue:1
Volume:29
Page:1-10
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ISSN:0353-3670
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Container-title:Facta universitatis - series: Electronics and Energetics
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language:en
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Short-container-title:FACTA U EE
Author:
Long Hong1,
Sweet Mark1,
Narayanan Sankara1
Affiliation:
1. University of Sheffield, Department of Electrical and Electronic Engineering, Sheffield, UK
Abstract
One of the critical requirements for high power devices is to have rugged and
reliable capability against hash operating conditions. In this paper, we
present the dynamic voltage clamping capability of 3.3kV Field Stop Clustered
IGBT devices under extreme inductive load condition. It shows that PMOS
trench gate CIGBT structure with outstanding performance of fast turn-off
time and low over-shoot voltage. Further optimization of current gain of
CIGBT structure is analyzed through numerical evaluation. A step further in
the safe operating area has been achieved for high voltage devices by CIGBT
technology.
Publisher
National Library of Serbia