The impact of radiation on semiconducting characteristics of monocrystalline silicon and germanium
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Published:2016
Issue:1
Volume:31
Page:97-101
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ISSN:1451-3994
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Container-title:Nuclear Technology and Radiation Protection
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language:en
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Short-container-title:NUCL TECH RAD PROT
Author:
Obrenovic Marija1,
Lazarevic Djordje2,
Stankovic Srboljub2,
Kartalovic Nenad3
Affiliation:
1. Faculty of Electrical Engineering, Belgrade
2. Vinča Institute of Nuclear Sciences, Radiation and Environmental Protection Department, Belgrade
3. Institute of Electrical Engineering “Nikola Tesla”, Belgrade
Abstract
The paper examines the effects of radiation on the electrical characteristics
of monocrystalline silicon and germanium. Samples of monocrystalline silicon
and germanium are irradiated under controlled laboratory conditions in the
field of neutron, X- and g-radiation. Change of the samples' specific
resistance was measured dependent on the radiation dose with the type of
radiation as a parameter. Next, the dependence of the samples resistance on
temperature was recorded (in the impurities region and in intrinsic region)
with the previously absorbed dose as a parameter. The results were
statistically analyzed and explained on the basis of radiation effects in
solids. The results are compared with those obtained by using Monte Carlo
method. A good agreement was confirmed by the mentioned experimental
investigation.
Funder
Ministry of Education, Science and Technological Development of the Republic of Serbia
Publisher
National Library of Serbia
Subject
Safety, Risk, Reliability and Quality,Nuclear Energy and Engineering