Dielectric studies on cerium doped BaLa2Ti3O10

Abstract

The BaLa2-xCexTi3O10 samples (with x = 0.2, 0.4, 0.6 and 0.8) were prepared by hydroxide co-precipitation method and finally sintered at 1150?C. The structure of the prepared samples was characterized by XRD and SEM. The single phase material was confirmed only for the BaLa1.8Ce0.2Ti3O10 ceramics. However, at higher cerium concentration secondary phase was observed. The characteristic plate-like structure, having grains with submicrometer thickness and high aspect ratio, was clearly observed by SEM. The results of dielectric measurement suggest that the appropriate adjustment of doping (with x between 0.2 and 0.8) will give sufficient high dielectric constant at very low loss. The resistivity of samples decreases with increase in temperature indicating the normal semiconducting electrical behaviour.