Theoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defects

Abstract

The semiconductor silicon wafer with micro-crack defects was detected using infrared thermal wave imaging technique. The 3-D thermal conduction model in semiconductor silicon wafer excited by linear frequency modulated continuous laser was established, and it was solved by finite element method. The results show the effectiveness of the proposed method for detecting micro-crack defects in semi?conductor silicon wafers.