Controlled electron leakage in electron blocking layer free InGaN/GaN nanowire light-emitting diodes

Abstract

In this study, we have proposed and investigated the effect of coupled quantum wells to reduce electron overflow in InGaN/GaN nanowire white color light-emitting diodes. The coupled quantum well before the active region could decrease the thermal velocity, which leads to a reduced electron mean free path. This improves the electron confinement in the active region and mitigates electron overflow in the devices. In addition, coupled quantum well after the active region utilizes the leaked electrons from the active region and contributes to the white light emission. Therefore, the output power and external quantum efficiency of the proposed nanowire LEDs are improved. Moreover, the efficiency droop was negligible up to 900 mA injection current.