Efficient Incorporation of Mg in Solution Grown GaN Crystals
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=11/a=111001/pdf
Reference19 articles.
1. Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method
2. Surface preparation of substrates from bulk GaN crystals
3. Bulk GaN crystal growth by the high-pressure ammonothermal method
4. Dislocation reduction in GaN crystal by advanced-DEEP
5. Fabrication and characterization of native non-polar GaN substrates
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3. GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation;Japanese Journal of Applied Physics;2019-05-17
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