Self-formation of ultrahigh-density (1012cm−2) InAs quantum dots on InAsSb/GaAs(001) and their photoluminescence properties
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=7/a=075501/pdf
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1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
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2. Abnormal photoluminescence properties of InAs/InAsSb in-plane ultrahigh-density quantum dots;Japanese Journal of Applied Physics;2024-08-01
3. Resonant tunneling injection of electrons through double stacked GaAs/InAs quantum dots with nanohole electrode;Japanese Journal of Applied Physics;2023-11-01
4. External-quantum-efficiency enhancement in quantum-dot solar cells with a Fabry–Perot light-trapping structure;Heliyon;2023-08
5. Demonstration of in-plane miniband formation in InAs/InAsSb ultrahigh-density quantum dots by analysis of temperature dependence of photoluminescence;Japanese Journal of Applied Physics;2022-10-01
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