Evolution of crystal imperfections during current-stress ageing tests of green InGaN light-emitting diodes-Reference-Cited by-同舟云学术

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Evolution of crystal imperfections during current-stress ageing tests of green InGaN light-emitting diodes

Published:2016-08-02 Issue:9 Volume:9 Page:092101
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Lin Yue,Peng Zhangbao,Zhu Lihong,Yan Wei,Shih Tien-mo,Wu Tingzhu,Lu Yijun,Gao Yulin,Chen Zhong,Guo Ziquan,Liu Zhuguang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/9/i=9/a=092101/pdf

Reference23 articles.

1. Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells

2. The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer

3. Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical–Optical Pump–Probe Technique

4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

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1. Deterioration of near-UV GaN-based LEDs in seawater vapour;Results in Physics;2020-12

2. Interplay of carriers and deep-level recombination centers of 275-nm light-emitting diodes — Analysis on the parasitic peaks over wide ranges of temperature and injection density;Optics Express;2019-07-10

3. Investigation on Three-Hump Phosphor-Coated White Light-Emitting Diodes for Healthy Lighting by Genetic Algorithm;IEEE Photonics Journal;2019-02

4. Effect of Carrier Localization and Shockley-Read-Hall Recombination on the Spatial Distribution of Electroluminescence in InGaN LEDs;IEEE Photonics Journal;2018-12

5. An introduction on microscopic-hyperspectral imaging for GaN-based LED investigation;Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII;2018-02-14

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