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GaInN-based tunnel junctions with graded layers

Published:2016-07-22 Issue:8 Volume:9 Page:081005
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Takasuka Daiki,Akatsuka Yasuto,Ino Masataka,Koide Norikatsu,Takeuchi Tetsuya,Iwaya Motoaki,Kamiyama Satoshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/9/i=8/a=081005/pdf

Reference30 articles.

1. GaN-Based Light Emitting Diodes with Tunnel Junctions

2. Integrated multilayer GaAs lasers separated by tunnel junctions

3. Double Heterostructure GaAs Tunnel Junction for a AlGaAs/GaAs Tandem Solar Cell

4. Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources

5. Multijunction GaInN-based solar cells using a tunnel junction

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1. High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact;Applied Physics Letters;2024-04-01

2. Characteristics of Stacked GaInN-Based Red, Green, and Blue Full-Color Monolithic μLED Arrays Connected via Tunnel Junctions;PHYS STATUS SOLIDI A;2024

3. Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy;Journal of Semiconductors;2024-01-01

4. Multi-active region AlGaN UV LEDs with transparent tunnel junctions;Applied Physics Express;2023-08-01

5. Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges;AIP Advances;2023-01-01

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