Fabrication of hydrogenated amorphous Si/crystalline Si1−xGex(x≤ 0.84) heterojunction solar cells grown by solid source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Fabrication of hydrogenated amorphous Si/crystalline Si1−xGex(x≤ 0.84) heterojunction solar cells grown by solid source molecular beam epitaxy

Published:2014-12-16 Issue:1 Volume:54 Page:012301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Oshima Ryuji,Yamanaka Mitsuyuki,Kawanami Hitoshi,Sakata Isao,Matsubara Koji,Sugaya Takeyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=1/a=012301/pdf

Reference31 articles.

1. Technology for high-performance n-channel SiGe modulation-doped field-effect transistors

2. SiGe/Si electronics and optoelectronics

3. High quality, relaxed SiGe epitaxial layers for solar cell application

4. Fabrication technology of SiGe hetero-structures and their properties

5. Energy harvesting efficiency of III–V triple-junction concentrator solar cells under realistic spectral conditions

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