Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs-Reference-Cited by-同舟云学术

Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs

Published:2015-03-27 Issue:4S Volume:54 Page:04DN08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohashi Takumi,Suda Kohei,Ishihara Seiya,Sawamoto Naomi,Yamaguchi Shimpei,Matsuura Kentaro,Kakushima Kuniyuki,Sugii Nobuyuki,Nishiyama Akira,Kataoka Yoshinori,Natori Kenji,Tsutsui Kazuo,Iwai Hiroshi,Ogura Atsushi,Wakabayashi Hitoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=4S/a=04DN08/pdf

Reference34 articles.

1. Design of ion-implanted MOSFET's with very small physical dimensions

2. Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm

3. Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition

4. Carrier Control of MoS2 Nanoflakes by Functional Self-Assembled Monolayers

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