Photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=5/a=054101/pdf
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1. Comprehensive analysis of optoelectronic performance of ultraviolet phototransistors based on AlGaN/GaN heterostructure;Semiconductor Science and Technology;2022-08-19
2. GaN-Based Micro-Light-Emitting Diode Driven by a Monolithic Integrated Ultraviolet Phototransistor;IEEE Electron Device Letters;2022-01
3. Temperature enhanced responsivity and speed in an AlGaN/GaN metal-heterostructure-metal photodetector;Applied Physics Letters;2021-07-05
4. Photocurrents in GaN-based HEMTs: Theoretical model and experimental results;Applied Physics Letters;2019-11-18
5. High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction;Nanomaterials;2019-08-26
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