Internal quantum efficiency mapping for evaluation of rear surface of passivated emitter and rear cell
Author:
Funder
New Energy and Industrial Technology Development Organization
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=8/a=086601/pdf
Reference30 articles.
1. 22.8% efficient silicon solar cell
2. The Passivated Emitter and Rear Cell (PERC): From conception to mass production
3. High-efficiency PERL and PERT silicon solar cells on FZ and MCZ substrates
4. 19.4%-efficient large-area fully screen-printed silicon solar cells
5. Understanding the uniqueness of the inkjet metallization of multicrystalline silicon solar cell
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1. Investigation of InGaAs/InP photodiode surface passivation using epitaxial regrowth of InP via photoluminescence and photocurrent;Materials Science in Semiconductor Processing;2023-02
2. An Investigation of Internal Quantum Efficiency of Bifacial Interdigitated Back Contact (IBC) Crystalline Silicon Solar Cell;IEEE Journal of Photovoltaics;2019-11
3. Effect of Oxygen Precipitation in Silicon Wafer on Electrical Characteristics of Fully Ion-Implanted n-Type PERT Solar Cells;ECS Journal of Solid State Science and Technology;2019
4. Impact of electrical shading loss suppression on interdigitated-back-contact Si solar cells with screen printing metallization concepts;15th International Conference on Concentrator Photovoltaic Systems (CPV-15);2019
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