Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs-Reference-Cited by-同舟云学术

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Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

Published:2018-02-15 Issue:3 Volume:11 Page:033003
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Asahara Hirokatsu,Kanaki Toshiki,Ohya Shinobu,Tanaka Masaaki

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=3/a=033003/pdf

Reference28 articles.

1. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

2. MOS-Based Spin Devices for Reconfigurable Logic

3. A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) with a ferromagnetic semiconductor for the channel

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Giant Spin‐Valve Effect in Planar Spin Devices Using an Artificially Implemented Nanolength Mott‐Insulator Region;Advanced Materials;2023-05-30

2. Analysis of mixed optical transitions in dilute magnetic AlAs/GaAs/GaMnAs quantum wells grown on high substrate index by molecular beam epitaxy;Materials Science and Engineering: B;2023-04

3. Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature;Applied Physics Letters;2020-08-31

4. Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device;Japanese Journal of Applied Physics;2020-02-20

5. Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts;Applied Physics Express;2019-02-15

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