Analytical derivation of charge relaxation time distribution in transistor from current noise spectrum using inverse integral transformation method-Reference-Cited by-同舟云学术

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Analytical derivation of charge relaxation time distribution in transistor from current noise spectrum using inverse integral transformation method

Published:2018-02-21 Issue:3 Volume:11 Page:031201
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Yatabe Zenji^ORCID,Inoue Shinya,Asubar Joel T.^ORCID,Kasai Seiya

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=3/a=031201/pdf

Reference26 articles.

1. Electrical fluctuations and photoinduced current transients in CdxHg1−xTe long wavelength epilayers

2. Generation–recombination noise in gallium nitride-based quantum well structures

3. Frequency Domain Detection of Biomolecules Using Silicon Nanowire Biosensors

4. Modeling of fluctuation processes on the biochemically sensorial surface of silicon nanowire field-effect transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inverse integral transformation method to derive local viscosity distribution measured by optical tweezers;Soft Matter;2020

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