Mobility model for advanced SOI-MOSFETs including back-gate contribution-Reference-Cited by-同舟云学术

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Mobility model for advanced SOI-MOSFETs including back-gate contribution

Published:2015-01-21 Issue:4S Volume:54 Page:04DC03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zenitani Hiroshi,Kikuchihara Hideyuki,Feldmann Uwe,Miyamoto Hidenori,Mattausch Hans Jürgen,Miura-Mattausch Michiko,Nakagawa Tadashi,Sugii Nobuyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=4S/a=04DC03/pdf

Reference25 articles.

1. Scaling the Si MOSFET: from bulk to SOI to bulk

2. Competitive SOC with UTBB SOI

3. Silicon on thin BOX: a new paradigm of the CMOSFET for low-power and high-performance application featuring wide-range back-bias control

4. Smallest Vth variability achieved by intrinsic silicon on thin BOX (SOTB) CMOS with single metal gate

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