Light emission from rare-earths in dislocation engineered silicon substrates-Reference-Cited by-同舟云学术

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Light emission from rare-earths in dislocation engineered silicon substrates

Published:2015-03-06 Issue:7S2 Volume:54 Page:07JB01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lourenço Manon A.,Ludurczak Willy,Prins Andrew D.,Milosavljević Momir,Gwilliam Russell M.,Homewood Kevin P.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=7S2/a=07JB01/pdf

Reference33 articles.

1. The optical properties of luminescence centres in silicon

2. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm

3. Point defect engineered Si sub-bandgap light-emitting diode

4. Optical gain and stimulated emission in periodic nanopatterned crystalline silicon

5. Enhanced photoluminescence from nanopatterned carbon-rich silicon grown by solid-phase epitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of Boron in Assisting the Super-Enhancement of Emissions from Carbon-Implanted Silicon;Materials;2023-03-02

2. Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator;Scientific Reports;2016-11-22

3. Silicon-Modified Rare-Earth Transitions-A New Route to Near- and Mid-IR Photonics;Advanced Functional Materials;2016-02-09

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