Radiation hardness evaluations of 65 nm fully depleted silicon on insulator and bulk processes by measuring single event transient pulse widths and single event upset rates-Reference-Cited by-同舟云学术

Radiation hardness evaluations of 65 nm fully depleted silicon on insulator and bulk processes by measuring single event transient pulse widths and single event upset rates

Published:2015-03-19 Issue:4S Volume:54 Page:04DC15
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Furuta Jun,Sonezaki Eiji,Kobayashi Kazutoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=4S/a=04DC15/pdf

Reference31 articles.

1. The impact of technology scaling on soft error rate performance and limits to the efficacy of error correction

2. Evaluation of a soft error tolerance technique based on time and/or space redundancy

3. Neutron- and alpha-particle induced soft-error rates for flip flops at a 40 nm technology node

4. On the radiation-induced soft error performance of hardened sequential elements in advanced bulk CMOS technologies

5. Comparison of multiple cell upset response of BULK and SOI 130NM technologies in the terrestrial environment

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2. Evaluation of Soft-Error Tolerance by Neutrons and Heavy Ions on Flip Flops With Guard Gates in a 65-nm Thin BOX FDSOI Process;IEEE Transactions on Nuclear Science;2020-07

3. Radiation-Hardened Structure to Reduce Sensitive Range of a Stacked Structure for FDSOI;IEEE Transactions on Nuclear Science;2019-07

4. Analyzing Impacts of SRAM, FF and Combinational Circuit on Chip-Level Neutron-Induced Soft Error Rate;IEICE Transactions on Electronics;2019-04-01

5. The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops;IEEE Transactions on Nuclear Science;2018-01