Heteroepitaxial growth of β-AlN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition-Reference-Cited by-同舟云学术

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Heteroepitaxial growth of β-AlN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition

Published:2015-04-16 Issue:6S1 Volume:54 Page:06FJ05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoshida Tomohiro,Ueda Yūtaro,Daio Takeshi,Tominaga Aki,Okajima Toshihiro,Yoshitake Tsuyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=6S1/a=06FJ05/pdf

Reference21 articles.

1. Optical phonon lifetimes in sputtered AlN thin films

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

3. Ultraviolet semiconductor laser diodes on bulk AlN

4. Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications

5. Synthesis of metastable epitaxial zinc‐blende‐structure AlN by solid‐state reaction

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